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BDX53C - onsemi

Description: Obsolete - Medium Power NPN Darlington Bipolar Power Transistor

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PCB Footprints
BDX53C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09 ISSUE AH
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3D Models
BDX53C - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09 ISSUE AH
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BDX53C Details

  • Manufacturer Part Number:

    BDX53C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    750

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    60 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • VCEsat-Max:

    2 V

BDX53C Frequently Asked Questions (FAQs)

  • The SOA for the BDX53C is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be within the boundaries of the maximum voltage, current, and power dissipation ratings.
  • To ensure linear operation, the BDX53C should be biased in the active region, where the base-emitter voltage (VBE) is around 0.7V and the collector-emitter voltage (VCE) is greater than 1V. The base current should be limited to prevent saturation, and the collector current should be within the recommended range.
  • A good PCB layout for the BDX53C should provide a solid ground plane, minimize trace lengths, and use wide traces for power connections. Thermal management is crucial; ensure good heat dissipation by using a heat sink, thermal interface material, and a sufficient air gap between the device and the PCB.
  • Yes, the BDX53C can be used as a switch, but it's essential to consider the switching frequency, voltage, and current ratings. Ensure the device is properly biased, and the base current is sufficient to drive the load. Be mindful of the device's power dissipation and thermal limitations.
  • To protect the BDX53C from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, and follow proper assembly and handling procedures.

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BDX53C Overview

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Part Image BDX53C STMicroelectronics

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Part Image BDX53C Continental Device India Ltd

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Part Image BDX53C Fairchild Semiconductor Corporation

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Part Image BDX53C Mospec Semiconductor Corp

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Part Image BDX53CTU onsemi

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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