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BDX53CG - onsemi

Description: High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc; Collector Emitter Sustaining Voltage @ 100 mAdc VCEO(sus) = 80 Vdc (Min) BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C; TO-220AB Compact Package; Monolithic Construction with Built-In Base-Emitter Shunt Resistors; Low Collector-Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc; Pb-Free Packages are Available

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PCB Footprints
BDX53CG - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
BDX53CG - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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BDX53CG Details

  • Manufacturer Part Number:

    BDX53CG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Additional Feature:

    LEADFORM OPTIONS ARE AVAILABLE

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    8 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    750

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    60 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    20 MHz

BDX53CG Frequently Asked Questions (FAQs)

  • The SOA for the BDX53CG is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be determined by considering the device's voltage, current, and power ratings, as well as its thermal resistance and maximum junction temperature.
  • To ensure linear operation, the BDX53CG should be biased in the active region, where the base-emitter voltage (VBE) is around 0.7V and the collector-emitter voltage (VCE) is greater than 1V. The base current should be limited to prevent saturation, and the collector current should be within the recommended range.
  • For optimal thermal performance, the BDX53CG should be mounted on a PCB with a solid copper plane or a thermal pad connected to a heat sink. The device should be placed near a thermal via or a heat sink to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended for the PCB.
  • Yes, the BDX53CG can be used as a switch, but it's essential to consider the device's switching characteristics, such as the turn-on and turn-off times, and the base-emitter voltage required for saturation. The device should be driven with a suitable base current to ensure fast switching and minimize power losses.
  • To protect the BDX53CG from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has ESD protection components, such as TVS diodes or ESD protection arrays, near the device. The device should also be stored in an anti-static bag or container.

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BDX53CG Overview

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