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BF245B - onsemi

Description: Obsolete - JFET N-Channel 30V TO-92

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PCB Footprints
BF245B - onsemi PCB footprint - Other - Other - TO127P254X732-3
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BF245B - onsemi  - 3D model - Other - TO127P254X732-3
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BF245B Details

  • Manufacturer Part Number:

    BF245B

  • Brand Name:

    onsemi

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92

  • Pin Count:

    3

  • Manufacturer Package Code:

    29-11

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    0.1 A

  • FET Technology:

    JUNCTION

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    235

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

BF245B Frequently Asked Questions (FAQs)

  • The maximum SOA for the BF245B is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the specified absolute maximum ratings to ensure reliable operation.
  • To ensure linear operation, the BF245B should be biased in the active region, where the base-emitter voltage (Vbe) is around 0.7V and the collector-emitter voltage (Vce) is greater than 1V. The base current should be limited to prevent saturation, and the collector current should be within the specified maximum rating.
  • For optimal performance and thermal management, it's recommended to use a multi-layer PCB with a solid ground plane, and to place the BF245B near a heat sink or a thermal pad. The device should be mounted with the metal tab facing downwards to facilitate heat dissipation. A thermal interface material (TIM) can be used to improve heat transfer between the device and the heat sink.
  • Yes, the BF245B can be used as a switch, but it's not recommended due to its relatively low current gain (β) and high saturation voltage (Vce(sat)). The device is better suited for linear amplification applications. If switching is required, consider using a dedicated switch transistor or a MOSFET with a lower Rds(on) and faster switching times.
  • To protect the BF245B from ESD, it's recommended to use anti-static packaging, handling, and storage procedures. During assembly, use an ESD wrist strap or mat, and ensure that the device is not exposed to static-prone environments. Consider adding ESD protection diodes or resistors in the circuit design to prevent voltage spikes and transients.

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BF245B Overview

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Part Image BF245B Micro Electronics Corporation

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Part Image BF245B NXP Semiconductors

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Part Image BF245B,126 NXP Semiconductors

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Part Image BF245AZL1 onsemi

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For a full list of alternate parts for BF245B, check out Findchips.com