BR24G08FVT-3GE2 - ROHM Semiconductor

BR24G08FVT-3GE2 Details

• Manufacturer Part Number:

  BR24G08FVT-3GE2

• Rohs Code:

  Yes

• Part Life Cycle Code:

  End Of Life

• Package Description:

  TSSOP-8

• Country Of Origin:

  Japan

• ECCN Code:

  EAR99

• HTS Code:

  8542.32.00.51

• Manufacturer:

  ROHM Semiconductor

• YTEOL:

  1

• Clock Frequency-Max (fCLK):

  0.4 MHz

• Data Retention Time-Min:

  40

• Endurance:

  1000000 Write/Erase Cycles

• I2C Control Byte:

  1010DMMR

• JESD-30 Code:

  R-PDSO-G8

• Length:

  4.4 mm

• Memory Density:

  8192 bit

• Memory IC Type:

  EEPROM

• Memory Width:

  8

• Number of Functions:

  1

• Number of Terminals:

  8

• Number of Words:

  1024 words

• Number of Words Code:

  1000

• Operating Mode:

  SYNCHRONOUS

• Operating Temperature-Max:

  85 °C

• Operating Temperature-Min:

  -40 °C

• Organization:

  1KX8

• Output Characteristics:

  3-STATE

• Package Body Material:

  PLASTIC/EPOXY

• Package Code:

  TSSOP

• Package Equivalence Code:

  TSSOP8,.25

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

• Packing Method:

  TR, EMBOSSED

• Parallel/Serial:

  SERIAL

• Programming Voltage:

  2.5 V

• Qualification Status:

  Not Qualified

• Seated Height-Max:

  1.2 mm

• Serial Bus Type:

  I2C

• Standby Current-Max:

  0.000002 A

• Supply Current-Max:

  0.002 mA

• Supply Voltage-Max (Vsup):

  5.5 V

• Supply Voltage-Min (Vsup):

  1.6 V

• Supply Voltage-Nom (Vsup):

  2.5 V

• Surface Mount:

  YES

• Technology:

  CMOS

• Temperature Grade:

  INDUSTRIAL

• Terminal Form:

  GULL WING

• Terminal Pitch:

  0.65 mm

• Terminal Position:

  DUAL

• Width:

  3 mm

• Write Cycle Time-Max (tWC):

  5 ms

• Write Protection:

  HARDWARE