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BR68 - GeneSiC Semiconductor

Description: Bridge Rectifiers SI BRIDGE RECT BR-10 50-1KV 6A 800P/560R

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PCB Footprints
BR68 - GeneSiC Semiconductor PCB footprint - Other - Other - BR68-2
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BR68 - GeneSiC Semiconductor  - 3D model - Other - BR68-2
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BR68 Details

  • Manufacturer Part Number:

    BR68

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    GeneSic Semiconductor Inc

  • YTEOL:

    7

  • Breakdown Voltage-Min:

    800 V

  • Configuration:

    BRIDGE, 4 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    BRIDGE RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.05 V

  • JESD-30 Code:

    S-PUFM-W4

  • Non-rep Pk Forward Current-Max:

    150 A

  • Number of Elements:

    4

  • Number of Phases:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    6 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Rep Pk Reverse Voltage-Max:

    800 V

  • Reverse Current-Max:

    10 µA

  • Reverse Test Voltage:

    800 V

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    UPPER

BR68 Frequently Asked Questions (FAQs)

  • GeneSic recommends a 2-layer or 4-layer PCB with a thermal pad connected to a large copper area on the bottom layer to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended.
  • Ensure proper heat sinking, use a thermally conductive material for the heat sink, and maintain a maximum junction temperature (Tj) of 150°C. Also, consider derating the device's current rating at high temperatures.
  • GeneSic recommends a gate drive voltage of 10-15V and a current of 1-2A to ensure fast switching times and low losses. A gate driver with a high current capability and low output impedance is recommended.
  • Use a TVS diode or a zener diode to clamp the voltage, and consider adding a current sense resistor and a fuse to detect and respond to overcurrent conditions. Also, implement a gate drive circuit with built-in overcurrent protection.
  • GeneSic recommends a dead time of 100-200ns to ensure proper switching and minimize shoot-through currents. The dead time may need to be adjusted based on the specific application and operating conditions.

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