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BS08D-T112 - POWEREX

Description: POWEREX - BS08D-T112 - BILATERAL SWITCH, 9V, 1A, TO-92

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BS08D-T112 - POWEREX PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - BS08D-T112
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3D Models
BS08D-T112 - POWEREX  - 3D model - Transistor Outline, Vertical - BS08D-T112
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BS08D-T112 Details

  • Manufacturer Part Number:

    BS08D-T112

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.30.00.80

  • Manufacturer:

    Powerex Power Semiconductors

  • Additional Feature:

    HIGH RELIABILITY

  • Breakover Voltage-Max:

    9 V

  • Breakover Voltage-Min:

    7 V

  • Configuration:

    SINGLE

  • Holding Current-Max:

    1.5 mA

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • On-State Voltage-Max:

    1.4 V

  • On-state Current-Max:

    175 A

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Switching Voltage-Max:

    9 V

  • Switching Voltage-Min:

    7 V

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Trigger Device Type:

    SILICON BILATERAL SWITCH

BS08D-T112 Frequently Asked Questions (FAQs)

  • A good PCB layout for the BS08D-T112 should prioritize thermal dissipation. Ensure the device is mounted on a thick copper plane, and use thermal vias to dissipate heat. Keep the layout symmetrical to minimize thermal gradients.
  • The gate resistor value depends on the specific application and switching frequency. A general guideline is to start with a value between 10 ohms to 100 ohms and adjust based on the device's switching characteristics and EMI considerations.
  • Operating the BS08D-T112 at high temperatures can reduce its lifespan and affect its performance. Ensure proper cooling and thermal management to keep the device within its recommended operating temperature range (up to 150°C).
  • Implement overvoltage protection using a TVS diode or a zener diode, and consider adding a current sense resistor to monitor and limit the current. Also, ensure the device is properly bypassed with capacitors to filter out voltage spikes.
  • To minimize EMI, use a shielded layout, keep the device and its associated components close together, and use a common-mode choke or ferrite bead to filter out high-frequency noise. Also, consider adding a snubber circuit to reduce voltage spikes.

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BS08D-T112 Overview

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