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BSB056N10NN3G - Infineon

Description: Infineon BSB056N10NN3G N-channel MOSFET Transistor, 83 A, 100 V, 7-Pin WDSON

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PCB Footprints
BSB056N10NN3G - Infineon PCB footprint - Other - Other - MG-WDSON-2_2022-1
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BSB056N10NN3G - Infineon  - 3D model - Other - MG-WDSON-2_2022-1
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BSB056N10NN3G Details

  • Manufacturer Part Number:

    BSB056N10NN3G

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    GREEN, METAL, WDSON-2, 3 PIN

  • Pin Count:

    3

  • Country Of Origin:

    Austria, Mainland China, Malaysia, Mexico

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    450 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    0.0056 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-MBCC-N3

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    78 W

  • Pulsed Drain Current-Max (IDM):

    332 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Silver/Nickel (Ag/Ni)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSB056N10NN3G Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSB056N10NN3G is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is securely fastened to the device. Additionally, consider the thermal resistance of the PCB and the ambient temperature to ensure the device operates within its specified temperature range.
  • The recommended gate drive voltage for the BSB056N10NN3G is between 10V and 15V. However, the device can tolerate gate voltages up to 20V. It's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device and ensure optimal performance.
  • Yes, the BSB056N10NN3G is suitable for high-frequency switching applications due to its low gate charge and internal gate resistance. However, it's essential to consider the device's switching losses, parasitic inductances, and PCB layout to ensure optimal performance and minimize electromagnetic interference (EMI).
  • To protect the BSB056N10NN3G from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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