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BSC005N03LS5IATMA1 - Infineon

Description: OptiMOS 5Power-Transistor,30V N-Channel TDSON-8FL

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BSC005N03LS5IATMA1 - Infineon PCB footprint - Other - Other - TDSON-8FL
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BSC005N03LS5IATMA1 - Infineon  - 3D model - Other - TDSON-8FL
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BSC005N03LS5IATMA1 Details

  • Manufacturer Part Number:

    BSC005N03LS5IATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TDSON-8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    430 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    433 A

  • Drain-source On Resistance-Max:

    0.00095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    240 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    188 W

  • Pulsed Drain Current-Max (IDM):

    1731 A

  • Reference Standard:

    IEC-61249-2-21; IEC-68-1

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC005N03LS5IATMA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for BSC005N03LS5IATMA1 is a 5-pin SOT-23 package with a 1.6mm x 1.6mm body size. The recommended land pattern is available in the Infineon application note AN2013-01.
  • To ensure reliability in high-temperature applications, it is recommended to follow the guidelines in the Infineon application note AN2013-01, which provides information on thermal design and layout considerations. Additionally, the device should be operated within the recommended operating temperature range of -40°C to 150°C.
  • The maximum allowed power dissipation for BSC005N03LS5IATMA1 is 1.4W at a junction temperature of 150°C. However, the actual power dissipation should be calculated based on the specific application and operating conditions.
  • Yes, BSC005N03LS5IATMA1 is suitable for high-frequency switching applications up to 100 kHz. However, the device should be operated within the recommended switching frequency range, and the layout and design should be optimized to minimize parasitic inductance and capacitance.
  • To protect BSC005N03LS5IATMA1 from electrostatic discharge (ESD), it is recommended to follow standard ESD protection procedures, such as using ESD-safe handling and storage procedures, and incorporating ESD protection devices in the circuit design.

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