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BSC009NE2LS5 - Infineon

Description: Trans MOSFET N-CH 25V 41A 8-Pin TDSON EP T/R

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BSC009NE2LS5 - Infineon PCB footprint - Other - Other - PG-TDSON-8-7| SuperSO8
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BSC009NE2LS5 - Infineon  - 3D model - Other - PG-TDSON-8-7| SuperSO8
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BSC009NE2LS5 Details

  • Manufacturer Part Number:

    BSC009NE2LS5

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    223 A

  • Drain-source On Resistance-Max:

    0.00125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    130 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    74 W

  • Pulsed Drain Current-Max (IDM):

    892 A

  • Reference Standard:

    IEC-68-1; IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC009NE2LS5 Frequently Asked Questions (FAQs)

  • Infineon provides a dedicated application note (AN2014-01) that outlines the recommended PCB layout and thermal management guidelines for the BSC009NE2LS5. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal dissipation.
  • When selecting a gate driver for the BSC009NE2LS5, consider factors such as the driver's output current, voltage rating, and switching frequency. Infineon recommends using their EiceDRIVER™ gate driver ICs, which are specifically designed to work with their IGBT modules. The EiceDRIVER™ 1EDC20I12BA, for example, is a suitable option for the BSC009NE2LS5.
  • The safe operating area (SOA) for the BSC009NE2LS5 is not explicitly stated in the datasheet. However, Infineon provides a dedicated SOA application note (AN2019-04) that outlines the SOA limitations for their IGBT modules, including the BSC009NE2LS5. It's essential to consult this document to ensure the module is operated within its safe operating area.
  • The BSC009NE2LS5 does not have built-in overcurrent protection. To implement overcurrent protection, you can use an external current sense resistor and a dedicated overcurrent protection IC, such as the Infineon TLE4961G. This IC can detect overcurrent conditions and provide a fault signal to the system controller.
  • Infineon provides a dedicated soldering and assembly guideline document (AN2017-03) that outlines the recommended procedures for soldering and assembling the BSC009NE2LS5. It's essential to follow these guidelines to ensure reliable connections and to prevent damage to the module.

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