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BSC011N03LSI - Infineon

Description: INFINEON - BSC011N03LSI - MOSFET, N-CH, 30V, 100A, TDSON-8

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BSC011N03LSI - Infineon PCB footprint - Other - Other - BSC011N03LSI-4
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BSC011N03LSI - Infineon  - 3D model - Other - BSC011N03LSI-4
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BSC011N03LSI Details

  • Manufacturer Part Number:

    BSC011N03LSI

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    37 A

  • Drain-source On Resistance-Max:

    0.0015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    96 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC011N03LSI Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BSC011N03LSI is -40°C to 150°C.
  • To ensure reliability, it is recommended to follow the thermal design guidelines provided by Infineon, and to implement proper thermal management, such as heat sinks or thermal interfaces, to keep the junction temperature within the recommended range.
  • The recommended gate drive voltage for the BSC011N03LSI is between 10V and 15V, with a maximum voltage of 20V.
  • To protect the BSC011N03LSI from overvoltage and overcurrent, it is recommended to use a suitable voltage regulator and overcurrent protection circuit, such as a fuse or a current sense resistor, in the application circuit.
  • The maximum allowed power dissipation for the BSC011N03LSI is 150W, but this value can be affected by the operating temperature and the thermal design of the application.

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