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BSC065N06LS5ATMA1 - Infineon

Description: MOSFET DIFFERENTIATED MOSFETS

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BSC065N06LS5ATMA1 - Infineon PCB footprint - Other - Other - BSC065N06LS5ATMA1-2
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BSC065N06LS5ATMA1 - Infineon  - 3D model - Other - BSC065N06LS5ATMA1-2
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BSC065N06LS5ATMA1 Details

  • Manufacturer Part Number:

    BSC065N06LS5ATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    21 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.0065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    256 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC065N06LS5ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSC065N06LS5ATMA1 is 175°C, as specified in the datasheet.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • The maximum current rating of the BSC065N06LS5ATMA1 is 65A, as specified in the datasheet. However, this rating is dependent on the PCB design, thermal management, and cooling system used.
  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the MOSFET from overvoltage. For ESD protection, use an ESD diode or a dedicated ESD protection IC.
  • Use a 2-layer or 4-layer PCB with a solid ground plane and a separate power plane. Keep the gate trace short and wide, and use a Kelvin connection for the source pin.

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