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BSC500N20NS3GATMA1 - Infineon

Description: MOSFET N-Ch 200V 24A TDSON-8

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BSC500N20NS3GATMA1 - Infineon PCB footprint - Other - Other - BSC500N20NS3GATMA1-3
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BSC500N20NS3GATMA1 - Infineon  - 3D model - Other - BSC500N20NS3GATMA1-3
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BSC500N20NS3GATMA1 Details

  • Manufacturer Part Number:

    BSC500N20NS3GATMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TDSON-8

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    24 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    97 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC500N20NS3GATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the BSC500N20NS3GATMA1 is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10 K/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via structure to dissipate heat efficiently.
  • The maximum current rating of the BSC500N20NS3GATMA1 is 500 A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.
  • To protect the BSC500N20NS3GATMA1 from overvoltage and overcurrent, a suitable voltage clamp and current sense resistor should be used. Additionally, a fuse or circuit breaker can be used to protect the device from excessive current.
  • The recommended gate drive voltage for the BSC500N20NS3GATMA1 is between 10 V and 15 V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance.

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