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BSDD10G65E2 - Bourns

Description: 650V 10A High Surge SiC schottky diode in TO252

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BSDD10G65E2 - Bourns PCB footprint - Other - Other - BSDD10G65E2
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BSDD10G65E2 - Bourns  - 3D model - Other - BSDD10G65E2
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BSDD10G65E2 Details

  • Manufacturer Part Number:

    BSDD10G65E2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DPAK-3/2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Bourns Inc

  • YTEOL:

    7

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON CARBIDE

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.7 V

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • Non-rep Pk Forward Current-Max:

    55 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    10 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Power Dissipation-Max:

    136.3 W

  • Rep Pk Reverse Voltage-Max:

    650 V

  • Reverse Current-Max:

    50 µA

  • Reverse Test Voltage:

    650 V

  • Surface Mount:

    YES

  • Technology:

    SCHOTTKY

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

Trust Checks

This model has been built in collaboration with the manufacturer.
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BSDD10G65E2 Overview

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Part Image WNSC5D10650D6J WeEn Semiconductor Co Ltd

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 650V V(RRM), Silicon Carbide, TO-252

Part Image BYV10MD-650PJ WeEn Semiconductor Co Ltd

Rectifier Diode, 1 Phase, 1 Element, 10A, 650V V(RRM), Silicon, TO-252