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BSF450NE7NH3XUMA1 - Infineon

Description: MOSFET N-Ch 75V 15A CanPAK-2 SH

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BSF450NE7NH3XUMA1 Details

  • Manufacturer Part Number:

    BSF450NE7NH3XUMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    17 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JESD-30 Code:

    R-XBCC-N2

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    18 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Silver/Nickel (Ag/Ni)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSF450NE7NH3XUMA1 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal via array underneath the device is recommended. The thermal vias should be connected to a solid copper plane on the bottom layer to dissipate heat efficiently.
  • Ensure that the device is operated within the specified junction temperature range (TJ) of -40°C to 150°C. Implement a thermal management system, such as a heat sink or fan, to keep the device temperature below 125°C.
  • A gate drive circuit with a voltage source (e.g., 12V or 15V) and a current-limiting resistor (e.g., 10Ω to 20Ω) is recommended. The gate drive voltage should be set to VGS = 10V to ensure proper switching.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current. A TVS diode and a fuse or PTC can be used for OVP and OCP, respectively.
  • A dead time of 100ns to 200ns is recommended to prevent shoot-through currents and ensure proper switching. The dead time can be adjusted based on the specific application requirements.

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