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BSS87 - NXP

Description: N-channel enhancement mode vertical D-MOS transistor

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BSS87 - NXP PCB footprint - Other - Other - BSS87-2
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BSS87 Details

  • Manufacturer Part Number:

    BSS87

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    SOT-89

  • Package Description:

    PLASTIC, SC-62, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Manufacturer:

    NXP Semiconductors

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    0.4 A

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-243

  • JESD-30 Code:

    R-PSSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSS87 Frequently Asked Questions (FAQs)

  • The BSS87 can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
  • To ensure proper biasing, the gate-source voltage (VGS) should be between 2V and 4V, and the drain-source voltage (VDS) should be between 1V and 12V. Additionally, the gate current (IG) should be limited to 10mA or less.
  • The maximum continuous drain current (ID) rating for the BSS87 is 1A, but it can handle up to 2A for short pulses (less than 10ms).
  • To protect the BSS87 from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static package. Additionally, use ESD protection devices such as TVS diodes or ESD protection arrays in the circuit design.
  • Yes, the BSS87 can be used as a switch in high-frequency applications up to 100MHz. However, the device's parasitic capacitances and inductances should be considered in the design, and the gate drive circuitry should be optimized for high-frequency operation.

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About NXP

NXP Semiconductors is a leading manufacturer of semiconductor devices with a wide range of semiconductor solutions, including microcontrollers, sensors, connectivity solutions, power management ICs, and security solutions. These products are used in a variety of applications such as automotive, industrial automation, smart homes, mobile devices, and more. NXP Semiconductors is one of the world’s largest semiconductor companies and is headquartered in Eindhoven, the Netherlands.

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Part Image BSS87,115 Nexperia

Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA

Part Image 933943940115 Nexperia

Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA

Part Image BSS87TRL13 NXP Semiconductors

Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243

Part Image BSS87TRL NXP Semiconductors

Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243

Part Image BSS87T/R NXP Semiconductors

Small Signal Field-Effect Transistor, 0.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243

For a full list of alternate parts for BSS87, check out Findchips.com