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BTA08-800BW3G - LITTELFUSE

Description: TRIAC Standard 800 V , 8 A , Through Hole TO-220AB , 90A @ 60Hz , 8 A , -40 to +125

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PCB Footprints
BTA08-800BW3G - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_2026-1.2
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3D Models
BTA08-800BW3G - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-220AB_2026-1.2
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BTA08-800BW3G Details

  • Manufacturer Part Number:

    BTA08-800BW3G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.30.00.80

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Qualification Status:

    Not Qualified

  • RMS On-state Current-Max:

    8 A

  • Repetitive Peak Off-state Voltage:

    800 V

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Trigger Device Type:

    TRIAC

BTA08-800BW3G Frequently Asked Questions (FAQs)

  • The recommended mounting torque for the BTA08-800BW3G is 1.5 Nm to 2.5 Nm (13 in-lbs to 22 in-lbs) to ensure proper thermal and electrical contact.
  • While the BTA08-800BW3G is designed for general-purpose switching applications, it is not recommended for high-frequency switching (>1 kHz) due to its relatively high switching losses and limited dv/dt capability.
  • To ensure safe operation in high-temperature environments, ensure that the device is properly heat-sinked, and the maximum junction temperature (Tj) is not exceeded. Also, consider derating the device's current and voltage ratings according to the datasheet's thermal derating curves.
  • A recommended gate drive circuit for the BTA08-800BW3G includes a gate resistor (Rg) of 1 kΩ to 10 kΩ, a gate capacitor (Cg) of 10 nF to 100 nF, and a gate drive voltage (Vg) of 10 V to 20 V. The exact values depend on the specific application requirements.
  • Yes, the BTA08-800BW3G can be used in a parallel configuration to increase current handling, but it is essential to ensure that the devices are properly matched, and the gate drive circuits are synchronized to prevent uneven current sharing.

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BTA08-800BW3G Overview

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