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BTA30-800CW3G - onsemi

Description: BTA30-800CW3G, ISO TO220 30A 35MA TRIAC

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PCB Footprints
BTA30-800CW3G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO_220
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3D Models
BTA30-800CW3G - onsemi  - 3D model - Transistor Outline, Vertical - TO_220
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BTA30-800CW3G Details

  • Manufacturer Part Number:

    BTA30-800CW3G

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    TO-220AB

  • Package Description:

    LEAD FREE, CASE 221A-07, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A-07

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.30.00.80

  • Manufacturer:

    onsemi

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Critical Rate of Rise of Off-State Voltage-Min:

    500 V/us

  • DC Gate Trigger Current-Max:

    35 mA

  • DC Gate Trigger Voltage-Max:

    1.3 V

  • Holding Current-Max:

    50 mA

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Leakage Current-Max:

    0.005 mA

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Qualification Status:

    Not Qualified

  • RMS On-state Current-Max:

    30 A

  • Repetitive Peak Off-state Voltage:

    800 V

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Trigger Device Type:

    SNUBBERLESS TRIAC

BTA30-800CW3G Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing the device on a thermal pad with a minimum size of 20mm x 20mm, and ensuring good thermal conductivity between the pad and the heat sink. Additionally, it is recommended to use a minimum of 2oz copper thickness and to avoid placing any vias or thermal barriers under the device.
  • To ensure reliable operation at high temperatures, it is recommended to follow the derating curves provided in the datasheet, and to ensure that the device is properly cooled. Additionally, it is recommended to use a thermal interface material (TIM) with a thermal conductivity of at least 1W/m-K, and to ensure that the device is operated within its specified junction temperature range.
  • The maximum allowed voltage transient on the BTA30-800CW3G is 1.5 times the maximum rated voltage (Vdrm) for a duration of less than 10ms. It is recommended to use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from voltage transients exceeding this limit.
  • The correct gate resistor value depends on the specific application requirements, including the switching frequency, gate drive voltage, and device characteristics. A general guideline is to use a gate resistor value between 10 ohms and 100 ohms, and to ensure that the gate current is limited to less than 10A. It is recommended to consult the datasheet and application notes for more detailed guidance.
  • The recommended gate drive voltage for the BTA30-800CW3G is between 10V and 15V, with a maximum gate drive voltage of 20V. It is recommended to use a gate drive voltage that is at least 2V higher than the minimum required voltage to ensure reliable switching.

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