Part Image

BUJ103AD,118 - WeEn Semiconductors

Description: Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R

Download BUJ103AD,118 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
BUJ103AD,118 - WeEn Semiconductors PCB footprint - Other - Other - BUJ103AD,118-1
click to zoom

BUJ103AD,118 Details

  • Manufacturer Part Number:

    BUJ103AD,118

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    PLASTIC, SC-63, DPAK-3/2

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    WeEn Semiconductor Co Ltd

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    400 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    13

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    NPN

  • Reference Standard:

    IEC-60134

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    3650 ns

  • Turn-on Time-Max (ton):

    600 ns

BUJ103AD,118 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a thermal pad on the bottom of the package, connected to a large copper area on the PCB. This helps to dissipate heat efficiently. Additionally, it's recommended to use a minimum of 2oz copper thickness and to avoid routing high-frequency signals near the device.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions and derating guidelines provided in the datasheet. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature. It's also crucial to ensure good airflow and to avoid overheating the device.
  • The BUJ103AD,118 has an ESD rating of Human Body Model (HBM) ≥ 2 kV and Machine Model (MM) ≥ 200 V. To prevent ESD damage, handle the device by the body or use an anti-static wrist strap. Store the device in an anti-static bag or container, and avoid touching the pins or leads during handling.
  • The BUJ103AD,118 is a general-purpose device, but it's not specifically designed for high-reliability or automotive applications. If you need a device for such applications, consider using a device with a higher qualification level, such as AEC-Q101 or ISO 26262. Consult with the manufacturer or a qualified engineer to determine the suitability of this device for your specific application.
  • The recommended soldering conditions for the BUJ103AD,118 are: peak temperature ≤ 260°C, soldering time ≤ 10 seconds, and a maximum of 2 reflows. Use a solder with a melting point above 217°C, and ensure the device is not exposed to temperatures above 300°C during the soldering process.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

BUJ103AD,118 Overview

Use the download button to access the BUJ103AD,118 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like BUJ10, or try a keyword search, such as Power Bipolar Transistors

Parts related to BUJ103AD,118

Showing 0 results

BUJ103AD,118 Alternates

Showing results

Image Part Number Model
Part Image BUJ103AD,118 NXP Semiconductors

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Part Image BUJ103AD NXP Semiconductors

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin