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BUK954R8-60E - Nexperia

Description: MOSFET, N-CH, 60V, 100A, TO-220AB

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BUK954R8-60E - Nexperia PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - BUK954R8
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BUK954R8-60E - Nexperia  - 3D model - Transistor Outline, Vertical - BUK954R8
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BUK954R8-60E Details

  • Manufacturer Part Number:

    BUK954R8-60E

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-46, 3 PIN

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Nexperia

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    273 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0049 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    429 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    234 W

  • Pulsed Drain Current-Max (IDM):

    590 A

  • Reference Standard:

    AEC-Q101; IEC-60134

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BUK954R8-60E Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the BUK954R8-60E is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the power dissipation above 100°C to ensure reliable operation.
  • To calculate the power dissipation of the BUK954R8-60E, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation can be calculated using the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
  • The recommended PCB layout for the BUK954R8-60E involves keeping the drain and source pins as close as possible to minimize the inductance and resistance of the PCB traces. It's also recommended to use a solid ground plane and to keep the gate drive circuitry close to the device to minimize noise and ringing.
  • Yes, the BUK954R8-60E is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and to ensure that the gate drive circuitry is capable of providing a fast and clean switching signal.
  • To protect the BUK954R8-60E from overvoltage and overcurrent, it's recommended to use a voltage clamp or a zener diode to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and limit the current flowing through the device.

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BUK954R8-60E Overview

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About Nexperia

Nexperia is a leading global player in the semiconductor industry. Specializing in essential electronic components, Nexperia offers a diverse range of products including discrete components, MOSFETs, logic ICs, and analog ICs. These components are integral to a multitude of applications across automotive, industrial, consumer electronics, and computing sectors, where reliability, performance, and efficiency are paramount.

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