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BUV21G - onsemi

Description: Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A; High DC current gain: hFE min. = 20 at IC = 12 A; Very fast switching times: TF max. = 0.4 µs at IC=25A; Pb-Free Package is Available

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BUV21G Overview

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BUV21G Alternates

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Image	Part Number	Model
	BUX21.MODR1 TT Electronics Resistors Power Bipolar Transistor, 40A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
	BUV21 TT Electronics Resistors Power Bipolar Transistor, 40A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
	BUV21 TT Electronics Power and Hybrid / Semelab Limited Power Bipolar Transistor, 40A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
	BUV21G Rochester Electronics LLC 40A, 200V, NPN, Si, POWER TRANSISTOR, TO-204AE, LEAD FREE, CASE 197A-05, TO-3, 2 PIN
	BUV21 STMicroelectronics Power Bipolar Transistor, 40A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
For a full list of alternate parts for BUV21G, check out Findchips.com