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BUZ74 - Infineon

Description: Infineon BUZ74 N-channel MOSFET Transistor, 2.4 A, 500 V, 3-Pin TO-220AB

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PCB Footprints
BUZ74 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_2020
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3D Models
BUZ74 - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB_2020
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BUZ74 Details

  • Manufacturer Part Number:

    BUZ74

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SFM

  • Package Description:

    TO-220, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    2.4 A

  • Drain-source On Resistance-Max:

    3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    9.5 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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BUZ74 Overview

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Part Image IRF823 Samsung Semiconductor

Power Field-Effect Transistor, 2.2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF822 Samsung Semiconductor

Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Image IRF821 STMicroelectronics

Power Field-Effect Transistor, 3A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF821 TT Electronics Resistors

Power Field-Effect Transistor, 2.5A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image 2SK2019-01 Fuji Electric Co Ltd

Power Field-Effect Transistor, 3.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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