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BYG23T-M3/TR - Vishay

Description: Diode 1A 1300V Ultrafast 75ns DO214AC Vishay BYG23T-M3/TR, SMT Fast Recovery Diode, 1300V 1A, 75ns, 2-Pin DO-214AC

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PCB Footprints
BYG23T-M3/TR - Vishay PCB footprint - Diodes Moulded - Diodes Moulded - DO-214AC (SMA)
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3D Models
BYG23T-M3/TR - Vishay  - 3D model - Diodes Moulded - DO-214AC (SMA)
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BYG23T-M3/TR Details

  • Manufacturer Part Number:

    BYG23T-M3/TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

  • Country Of Origin:

    Austria

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • JEDEC-95 Code:

    DO-214AC

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Rep Pk Reverse Voltage-Max:

    1300 V

  • Reverse Recovery Time-Max:

    0.075 µs

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

BYG23T-M3/TR Frequently Asked Questions (FAQs)

  • The recommended storage temperature for BYG23T-M3/TR is -40°C to 125°C.
  • Yes, BYG23T-M3/TR is suitable for high-reliability applications due to its high-quality construction and rigorous testing.
  • Handle the BYG23T-M3/TR by the body, avoiding touching the leads or glass to prevent damage or contamination.
  • The maximum allowable power dissipation for BYG23T-M3/TR is 1.5 W at an ambient temperature of 25°C.
  • Yes, BYG23T-M3/TR is designed for high-voltage applications, with a maximum repetitive peak reverse voltage of 1000 V.

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BYG23T-M3/TR Overview

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Part Image BYG23T-M3/TR Vishay Semiconductors

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 1300V V(RRM), Silicon, DO-214AC

Part Image BYG23T-M3/TR3 Vishay Intertechnologies

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 1300V V(RRM), Silicon, DO-214AC

Part Image BYG23T-M3/TR3 Vishay Semiconductors

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1A, 1300V V(RRM), Silicon, DO-214AC