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BYV32-200G - onsemi

Description: Ultrafast 35 Nanosecond Recovery Time; 175°C Operating Junction Temperature; Popular TO-220 Package; Epoxy Meets UL94, VO @ 1/8 inch; High Temperature Glass Passivated Junction; Low Leakage Specified @ 150°C Case Temperature; Current Derating @ Both Case and Ambient Temperatures; Pb-Free Package is Available

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PCB Footprints
BYV32-200G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
BYV32-200G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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BYV32-200G Details

  • Manufacturer Part Number:

    BYV32-200G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Vietnam

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.37

  • Additional Feature:

    LOW POWER LOSS

  • Application:

    EFFICIENCY

  • Breakdown Voltage-Min:

    200 V

  • Case Connection:

    CATHODE

  • Configuration:

    COMMON CATHODE, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    0.85 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    100 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    8 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Current-Max:

    50 µA

  • Reverse Recovery Time-Max:

    0.035 µs

  • Reverse Test Voltage:

    200 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

BYV32-200G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal pad to maintain a low junction temperature. Monitor the device's thermal resistance (RθJA) and ensure it is within the specified range.
  • A reflow soldering profile with a peak temperature of 260°C and a dwell time of 20-30 seconds is recommended. The device should be soldered using a Pb-free solder alloy with a melting point above 217°C.
  • Store the devices in their original packaging or in a dry, ESD-protected environment. Avoid exposing the devices to moisture, direct sunlight, or extreme temperatures. Use ESD protection during handling and shipping.
  • Use a low-inductance, low-resistance connection to the device's pins. Ensure that the connections are secure and can handle the device's maximum current rating. Use a Kelvin connection for the sense pins to minimize voltage drops.

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BYV32-200G Overview

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Part Image BYV32-200 onsemi

Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-220AB