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BZV55B10 - Taiwan Semiconductor

Description: Zener Diode 10 V 500 mW ±2% Surface Mount Mini MELF , 15 Ohms , -65°C ~ 175°C (TJ)

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BZV55B10 - Taiwan Semiconductor PCB footprint - Other - Other - MMELF_2025
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BZV55B10 Details

  • Manufacturer Part Number:

    BZV55B10

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MELF-2

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Taiwan Semiconductor

  • YTEOL:

    6.25

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    ZENER DIODE

  • JESD-30 Code:

    O-LELF-R2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.5 W

  • Reference Voltage-Nom:

    10 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    WRAP AROUND

  • Terminal Position:

    END

  • Voltage Tol-Max:

    2%

  • Working Test Current:

    5 mA

BZV55B10 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the BZV55B10 is -65°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade if operated outside this range for extended periods.
  • To ensure proper derating, follow the guidelines provided in the datasheet. Typically, you'll need to reduce the power dissipation (Pd) by 1.5 mW/°C above 25°C. For example, if the maximum Pd is 500 mW at 25°C, it would be reduced to 375 mW at 50°C (500 mW - (50°C - 25°C) x 1.5 mW/°C).
  • The typical reverse recovery time (trr) for the BZV55B10 is not explicitly stated in the datasheet. However, as a general guideline, the trr for Zener diodes in this family is usually in the range of 1-5 ns. For more accurate information, consult Taiwan Semiconductor's application notes or contact their support team.
  • While the BZV55B10 can be used as a voltage regulator, it's not the most suitable application. Zener diodes are designed for voltage regulation, but they have limitations, such as a relatively high impedance and a non-linear voltage-current characteristic. For more precise voltage regulation, consider using a dedicated voltage regulator IC or a more specialized Zener diode designed for voltage regulation.
  • To prevent electrostatic discharge (ESD) damage, follow proper handling and storage procedures. Use an ESD wrist strap or mat, and ensure that your workspace is ESD-protected. When handling the device, avoid touching the pins or leads, and use an anti-static bag or tube for storage. Additionally, consider adding ESD protection components, such as TVS diodes, to your circuit design.

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BZV55B10 Overview

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