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BZV55B9V1 - Taiwan Semiconductor

Description: Zener Diodes 9.1 Volt 500mW 2%

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BZV55B9V1 - Taiwan Semiconductor PCB footprint - Other - Other - BZV55B9V1-2
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BZV55B9V1 Details

  • Manufacturer Part Number:

    BZV55B9V1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    MELF-2

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Taiwan Semiconductor

  • YTEOL:

    6.25

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    ZENER DIODE

  • JESD-30 Code:

    O-LELF-R2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.5 W

  • Reference Voltage-Nom:

    9.1 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    WRAP AROUND

  • Terminal Position:

    END

  • Voltage Tol-Max:

    1.98%

  • Working Test Current:

    5 mA

BZV55B9V1 Frequently Asked Questions (FAQs)

  • The recommended soldering temperature for the BZV55B9V1 is between 240°C to 260°C for a maximum of 10 seconds.
  • While the BZV55B9V1 is a fast-switching diode, it's not recommended for high-frequency switching (>100 kHz) due to its relatively high reverse recovery time (trr). For high-frequency applications, consider using a diode with a lower trr, such as a Schottky diode.
  • To prevent ESD damage, use an anti-static wrist strap or mat, and ensure that your workspace is ESD-protected. Additionally, handle the components by the body or lead, rather than the pins, to minimize the risk of ESD damage.
  • The maximum allowable power dissipation for the BZV55B9V1 is 500 mW. Exceeding this limit can lead to thermal runaway and device failure.
  • The BZV55B9V1 is rated for operation up to 150°C. However, the device's performance and reliability may degrade at elevated temperatures. For high-temperature applications, consider using a diode with a higher temperature rating.

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BZV55B9V1 Overview

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