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C106D - onsemi

Description: Silicon Controlled Rectifier, 400 Volt, TO-126 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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C106D - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - C106D
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C106D - onsemi  - 3D model - Transistor Outline, Vertical - C106D
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C106D Details

  • Manufacturer Part Number:

    C106D

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-225AA

  • Pin Count:

    3

  • Manufacturer Package Code:

    CASE 77-09

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.30.00.80

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    SENSITIVE GATE

  • Case Connection:

    ANODE

  • Circuit Commutated Turn-off Time-Nom:

    40 µs

  • Configuration:

    SINGLE

  • Critical Rate of Rise of Off-State Voltage-Min:

    8 V/us

  • DC Gate Trigger Current-Max:

    0.2 mA

  • DC Gate Trigger Voltage-Max:

    0.8 V

  • Holding Current-Max:

    3 mA

  • JEDEC-95 Code:

    TO-225AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Leakage Current-Max:

    0.1 mA

  • Non-Repetitive Pk On-state Cur:

    20 A

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • On-state Current-Max:

    4000 A

  • Operating Temperature-Max:

    110 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    235

  • Qualification Status:

    Not Qualified

  • RMS On-state Current-Max:

    4 A

  • Repetitive Peak Off-state Voltage:

    400 V

  • Repetitive Peak Reverse Voltage:

    400 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn80Pb20)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Trigger Device Type:

    SCR

C106D Frequently Asked Questions (FAQs)

  • The maximum SOA for the C106D is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be assumed to be around 10A/100V.
  • To ensure linear operation, the C106D should be biased in the active region, with a base-emitter voltage (Vbe) between 0.6V to 0.8V, and a collector-emitter voltage (Vce) greater than 1V. The base current should be limited to prevent saturation.
  • A good PCB layout for the C106D should provide a solid ground plane, minimize trace inductance, and keep the transistor away from heat sources. Thermal management is crucial; ensure good heat sinking, and consider using a heat sink or thermal interface material to keep the junction temperature below 150°C.
  • Yes, the C106D can be used in switching applications, but it's essential to consider the device's switching characteristics, such as the transition frequency, rise and fall times, and the maximum collector current. The C106D is not optimized for high-frequency switching, and its performance may degrade above 100 kHz.
  • To protect the C106D from ESD, handle the device by the body, not the leads, and use an anti-static wrist strap or mat. Ensure the PCB has adequate ESD protection, such as TVS diodes or ESD protection arrays, and follow proper soldering and handling procedures.

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Part Image C106DG Littelfuse Inc

Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-225AA

Part Image C106D1G onsemi

Silicon Controlled Rectifier, 4A I(T)RMS, 4mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, TO-225AA

Part Image C106D1 Central Semiconductor Corp

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Part Image C106M-1 Motorola Mobility LLC

4A, 600V, SCR, TO-225AA

Part Image C106D Powerex Power Semiconductors

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