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C4D20120H - Wolfspeed

Description: 1200 V, 20 A, TO-247-2 package, Industrial qualified, Discrete SiC Schottky Diode

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C4D20120H - Wolfspeed PCB footprint - Other - Other - TO-247-2_25
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C4D20120H - Wolfspeed  - 3D model - Other - TO-247-2_25
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C4D20120H Details

  • Manufacturer Part Number:

    C4D20120H

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Wolfspeed

  • YTEOL:

    5.98

  • Additional Feature:

    FREE WHEELING DIODE, PD-CASE

  • Application:

    EFFICIENCY

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.8 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T2

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    104 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    54 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    246 W

  • Rep Pk Reverse Voltage-Max:

    1200 V

  • Reverse Current-Max:

    200 µA

  • Reverse Test Voltage:

    1200 V

  • Surface Mount:

    NO

  • Technology:

    SCHOTTKY

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

C4D20120H Frequently Asked Questions (FAQs)

  • Wolfspeed recommends a PCB layout with a large copper area for heat dissipation, and a thermal via array under the device to improve heat transfer.
  • Ensure proper heat sinking, use a thermally conductive material for the PCB, and follow Wolfspeed's recommended thermal design guidelines to ensure reliable operation at high temperatures.
  • The maximum allowable voltage transient for the C4D20120H is 1200V, but it's recommended to limit transients to 1000V or less to ensure device reliability.
  • Yes, the C4D20120H can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
  • The recommended gate drive voltage for the C4D20120H is +15V to +20V, with a maximum gate drive current of 2A.

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C4D20120H Overview

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