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CAV25M01YE-GT3 - onsemi

Description: EEPROM Memory IC 1Mbit SPI 10 MHz 8-TSSOP -40°C+125°C,5.5V

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PCB Footprints
CAV25M01YE-GT3 - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - TSSOP8, 4.4x3.0, 0.65P CASE 948AL ISSUE A_2026-1
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3D Models
CAV25M01YE-GT3 - onsemi  - 3D model - Small Outline Packages - TSSOP8, 4.4x3.0, 0.65P CASE 948AL ISSUE A_2026-1
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CAV25M01YE-GT3 Details

  • Manufacturer Part Number:

    CAV25M01YE-GT3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TSSOP8, 4.4x3

  • Package Description:

    TSSOP-8

  • Pin Count:

    8

  • Manufacturer Package Code:

    948AL

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Clock Frequency-Max (fCLK):

    10 MHz

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e4

  • Length:

    4.4 mm

  • Memory Density:

    1048576 bit

  • Memory IC Type:

    EEPROM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    131072 words

  • Number of Words Code:

    128000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    128KX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSSOP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    1.2 mm

  • Serial Bus Type:

    SPI

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    2.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.65 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    3 mm

  • Write Cycle Time-Max (tWC):

    5 ms

CAV25M01YE-GT3 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a thermal relief pattern on the top and bottom layers, and a solid copper pour on the inner layers. This helps to dissipate heat efficiently and reduces thermal resistance.
  • To ensure reliability in high-temperature applications, it's essential to follow the recommended operating conditions, use a suitable thermal interface material, and implement a robust cooling system. Additionally, consider using a thermistor or temperature sensor to monitor the device temperature and implement thermal protection mechanisms.
  • The maximum allowed voltage transient for the CAV25M01YE-GT3 is typically specified as 40V for a duration of 100ms. However, it's recommended to consult with onsemi's application engineers or refer to the device's reliability report for more detailed information on voltage transient tolerance.
  • Yes, the CAV25M01YE-GT3 can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the PCB layout is designed to minimize current imbalance and thermal mismatch between the devices.
  • The recommended gate drive voltage for the CAV25M01YE-GT3 is typically between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult with onsemi's application engineers or refer to the device's application note for more detailed information.

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CAV25M01YE-GT3 Overview

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