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CIGT252010EH2R2MNE - SAMSUNG

Description: 2.2 µH Shielded Thin Film Inductor 2.4 A 80mOhm Max 1008 (2520 Metric)

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CIGT252010EH2R2MNE - SAMSUNG  - 3D model
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CIGT252010EH2R2MNE Details

  • Manufacturer Part Number:

    CIGT252010EH2R2MNE

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    CHIP, 1008

  • ECCN Code:

    EAR99

  • HTS Code:

    8504.50.80.00

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Samsung Electro-Mechanics

  • YTEOL:

    6

  • Core Material:

    METAL COMPOSITE

  • DC Resistance:

    0.077 Ω

  • Inductance-Nom (L):

    2.2 µH

  • Inductor Application:

    POWER INDUCTOR

  • Inductor Type:

    GENERAL PURPOSE INDUCTOR

  • JESD-609 Code:

    e3

  • Number of Functions:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Rated Current-Max:

    2.61 A

  • Shape/Size Description:

    RECTANGULAR PACKAGE

  • Shielded:

    NO

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN OVER NICKEL

  • Terminal Placement:

    DUAL ENDED

  • Terminal Shape:

    WRAPAROUND

  • Test Frequency:

    1 MHz

  • Tolerance:

    20%

CIGT252010EH2R2MNE Frequently Asked Questions (FAQs)

  • The recommended soldering temperature profile for the CIGT252010EH2R2MNE capacitor is a peak temperature of 260°C for 10-30 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s.
  • The ESR of the CIGT252010EH2R2MNE capacitor decreases with increasing frequency, with a typical value of 20 mΩ at 100 kHz and 10 mΩ at 1 MHz.
  • The CIGT252010EH2R2MNE capacitor has an MSL rating of 3, which means it can withstand exposure to moisture for up to 168 hours at 30°C and 60% relative humidity.
  • Yes, the CIGT252010EH2R2MNE capacitor is suitable for use in high-reliability applications, as it meets the requirements of various industry standards, including AEC-Q200 and MIL-PRF-123.
  • The CIGT252010EH2R2MNE capacitor has a derating curve that reduces its maximum voltage rating by 1.25% per °C above 85°C, and its maximum temperature rating by 1.5% per volt above 10 V.

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CIGT252010EH2R2MNE Overview

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