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CY14B101LA-SP45XI - Infineon

Description: nvSRAM

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CY14B101LA-SP45XI - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 48-pin SSOP (300mils)_inches
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CY14B101LA-SP45XI - Infineon  - 3D model - Small Outline Packages - 48-pin SSOP (300mils)_inches
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CY14B101LA-SP45XI Details

  • Manufacturer Part Number:

    CY14B101LA-SP45XI

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.41

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    8

  • Access Time-Max:

    45 ns

  • JESD-30 Code:

    R-PDSO-G48

  • JESD-609 Code:

    e4

  • Length:

    15.875 mm

  • Memory Density:

    1048576 bit

  • Memory IC Type:

    NON-VOLATILE SRAM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    48

  • Number of Words:

    131072 words

  • Number of Words Code:

    128000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    128KX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SSOP

  • Package Equivalence Code:

    SSOP48,.4

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, SHRINK PITCH

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    2.794 mm

  • Standby Current-Max:

    0.005 A

  • Supply Current-Max:

    0.052 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.635 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Width:

    7.5 mm

CY14B101LA-SP45XI Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the signal traces short and away from noise sources. Use a 0.1uF decoupling capacitor between VCC and GND near the device.
  • Use a voltage supervisor or a power-on reset circuit to ensure that the device is fully powered up before accessing the memory. Also, use a capacitor to filter out power noise and ensure a clean power-up sequence.
  • The CY14B101LA-SP45XI is rated for operation from -40°C to +85°C. However, it's recommended to operate within a narrower range (e.g., 0°C to 70°C) for optimal performance and reliability.
  • The CY14B101LA-SP45XI is not designed for use in radiation-intensive environments. If your application requires radiation hardness, consider using a different device or consulting with Infineon's radiation-hardened products.
  • Implement error detection and correction mechanisms, such as CRC checks and retry mechanisms, to handle errors during write operations. Also, ensure that the device is properly powered and that the write cycle is completed before accessing the memory.

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CY14B101LA-SP45XI Overview

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Part Image CY14B101KA-SP45XC Cypress Semiconductor

Non-Volatile SRAM, 128KX8, 45ns, CMOS, PDSO48