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CY14B116L-ZS25XI - Infineon

Description: NVSRAM (Non-Volatile SRAM) Memory IC 16Mbit Parallel 25 ns 44-TSOP II

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CY14B116L-ZS25XI - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 44-Pin TSOP II (51-85087)
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CY14B116L-ZS25XI - Infineon  - 3D model - Small Outline Packages - 44-Pin TSOP II (51-85087)
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CY14B116L-ZS25XI Details

  • Manufacturer Part Number:

    CY14B116L-ZS25XI

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Access Time-Max:

    25 ns

  • JESD-30 Code:

    R-PDSO-G44

  • JESD-609 Code:

    e3

  • Length:

    18.415 mm

  • Memory Density:

    16777216 bit

  • Memory IC Type:

    NON-VOLATILE SRAM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    44

  • Number of Words:

    2097152 words

  • Number of Words Code:

    2000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    2MX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSOP2

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    1.194 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Pure Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    DUAL

  • Width:

    10.16 mm

CY14B116L-ZS25XI Frequently Asked Questions (FAQs)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the signal traces short and away from noise sources. Use a decoupling capacitor (e.g., 100nF) close to the VCC pin.
  • Use a voltage supervisor (e.g., CY1149) to monitor the power supply and ensure that the device is only accessed when the power supply is stable. Implement a power-on reset (POR) circuit to reset the device during power-up.
  • The maximum operating frequency is 108 MHz, but it depends on the specific application and system design. Consult the datasheet and application notes for more information.
  • The CY14B116L-ZS25XI is rated for operation up to 85°C. For higher temperatures, consider using a device with a higher temperature rating or implementing thermal management techniques (e.g., heat sinks, thermal interfaces).
  • Implement error detection and correction mechanisms, such as ECC (Error-Correcting Code) or CRC (Cyclic Redundancy Check), to detect and correct data errors. Use interrupts or status flags to handle exceptions and errors.

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CY14B116L-ZS25XI Overview

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Part Image CY14B116L-ZS25XI Cypress Semiconductor

Non-Volatile SRAM, 2MX8, 25ns, CMOS, PDSO44