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CY14E116L-ZS25XIT - Infineon

Description: 16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM

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CY14E116L-ZS25XIT - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 44-pin TSOP Package Outline, 51-85087
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CY14E116L-ZS25XIT - Infineon  - 3D model - Small Outline Packages - 44-pin TSOP Package Outline, 51-85087
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CY14E116L-ZS25XIT Details

  • Manufacturer Part Number:

    CY14E116L-ZS25XIT

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Access Time-Max:

    25 ns

  • JESD-30 Code:

    R-PDSO-G44

  • JESD-609 Code:

    e3

  • Length:

    18.415 mm

  • Memory Density:

    16777216 bit

  • Memory IC Type:

    NON-VOLATILE SRAM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    44

  • Number of Words:

    2097152 words

  • Number of Words Code:

    2000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    2MX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSOP2

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE

  • Parallel/Serial:

    PARALLEL

  • Seated Height-Max:

    1.194 mm

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    4.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Pure Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.8 mm

  • Terminal Position:

    DUAL

  • Width:

    10.16 mm

CY14E116L-ZS25XIT Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for CY14E116L-ZS25XIT is -40°C to +85°C.
  • It is recommended to follow a controlled power-up and power-down sequence to prevent unwanted writes or data corruption. A slow power ramp (typically 10 ms/V) is recommended, and the device should be powered up/down in the following sequence: VCC, then VIO, then SCL and SDA.
  • The maximum clock frequency supported by CY14E116L-ZS25XIT is 400 kHz.
  • To ensure data integrity and prevent data corruption during power failures, it is recommended to use a capacitor (typically 10 μF) connected between VCC and VSS, and to implement a power-fail detection circuit to reset the device during power-down.
  • The WP (Write Protect) pin is used to prevent accidental writes to the device. When the WP pin is tied to VCC, the device is in write-protect mode, and any write attempts will be ignored. When the WP pin is tied to VSS, the device is in normal operation mode.

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