CY15B104QN-20LPXI - Infineon
Description: • 4-Mb ferroelectric random access memory (F-RAM) logically organized as 512K × 8 - Virtually unlimited endurance of 1000 trillion (1015) read/write cycles - 151-year data retention (See “Data retention and endurance” on page 27) - Infineon instant non-volatile write technology - Advanced high-reliability ferroelectric process • Fast serial peripheral interface (SPI) - Up to 50 MHz frequency - Supports SPI mode 0 (0, 0) and mode 3 (1, 1) • Sophisticated write protection scheme - Hardware protection
