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CY62157EV18LL-55BVXI - Infineon

Description: ■ Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A ■ Ultra low active power ❐ Typical active current: 6 mA at f = 1 MHz ■ Easy memory expansion with CE1, CE2 and OE features ■ Automatic power down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in Pb-free 48-ball very fine-pitch ball grid arr

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CY62157EV18LL-55BVXI - Infineon PCB footprint - BGA - BGA - 48-ball VFBGA_2020
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CY62157EV18LL-55BVXI - Infineon  - 3D model - BGA - 48-ball VFBGA_2020
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CY62157EV18LL-55BVXI Details

  • Manufacturer Part Number:

    CY62157EV18LL-55BVXI

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    8

  • Access Time-Max:

    55 ns

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-PBGA-B48

  • JESD-609 Code:

    e1

  • Length:

    8 mm

  • Memory Density:

    8388608 bit

  • Memory IC Type:

    STANDARD SRAM

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    48

  • Number of Words:

    524288 words

  • Number of Words Code:

    512000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512KX16

  • Output Characteristics:

    3-STATE

  • Output Enable:

    YES

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VFBGA

  • Package Equivalence Code:

    BGA48,6X8,30

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE, FINE PITCH

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1 mm

  • Standby Current-Max:

    0.000009 A

  • Standby Voltage-Min:

    1 V

  • Supply Current-Max:

    0.025 mA

  • Supply Voltage-Max (Vsup):

    2.25 V

  • Supply Voltage-Min (Vsup):

    1.65 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.75 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    20

  • Width:

    6 mm

CY62157EV18LL-55BVXI Frequently Asked Questions (FAQs)

  • The CY62157EV18LL-55BVXI operates over an industrial temperature range of -40°C to +85°C.
  • The device has a power-up and power-down sequence that must be followed to ensure proper operation. The power supply voltage (VCC) must be applied before the chip enable (CE) and output enable (OE) signals. During power-down, the CE and OE signals must be deactivated before the power supply voltage is removed.
  • The CY62157EV18LL-55BVXI supports a maximum clock frequency of 55 MHz.
  • The CY62157EV18LL-55BVXI is a synchronous SRAM that can be interfaced with a microcontroller or processor using a synchronous interface. The device requires a clock signal, chip enable signal, and output enable signal to operate. The data bus is 18 bits wide, and the address bus is 12 bits wide.
  • The CY62157EV18LL-55BVXI has a latency of 2 clock cycles for read operations and 1 clock cycle for write operations.

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