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CY62157G30-45BVXI - Infineon

Description: SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 48-VFBGA (6x8) ,2.2V ~ 3.6V ,-40°C ~ 85°C

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CY62157G30-45BVXI - Infineon PCB footprint - BGA - BGA - PG-VFBGA-48-800_2026
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CY62157G30-45BVXI - Infineon  - 3D model - BGA - PG-VFBGA-48-800_2026
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CY62157G30-45BVXI Details

  • Manufacturer Part Number:

    CY62157G30-45BVXI

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    8

  • Access Time-Max:

    45 ns

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-PBGA-B48

  • JESD-609 Code:

    e1

  • Length:

    8 mm

  • Memory Density:

    8388608 bit

  • Memory IC Type:

    STANDARD SRAM

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    48

  • Number of Words:

    524288 words

  • Number of Words Code:

    512000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512KX16

  • Output Characteristics:

    3-STATE

  • Output Enable:

    YES

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TFBGA

  • Package Equivalence Code:

    BGA48,6X8,30

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE, FINE PITCH

  • Packing Method:

    BULK

  • Parallel/Serial:

    PARALLEL

  • Seated Height-Max:

    1 mm

  • Standby Current-Max:

    0.0000065 A

  • Standby Voltage-Min:

    3 V

  • Supply Current-Max:

    0.025 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.2 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS, 65 nm

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    0.75 mm

  • Terminal Position:

    BOTTOM

  • Width:

    6 mm

CY62157G30-45BVXI Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout guide in their application note AN201908, which includes guidelines for component placement, routing, and thermal management to ensure optimal performance and minimize noise.
  • The CY62157G30-45BVXI has a specific power-up and power-down sequencing requirement to prevent latch-up and ensure proper operation. It's recommended to follow the power-up and power-down sequence described in the datasheet, and to use a power-on reset (POR) circuit to ensure a clean power-up sequence.
  • While the datasheet specifies an operating temperature range of -40°C to 85°C, it's essential to note that the device can operate up to 125°C for short periods (less than 100 hours) with reduced performance and reliability. However, it's recommended to operate the device within the specified temperature range for optimal performance and reliability.
  • A reliable reset circuit is crucial for proper device operation. Infineon recommends using a dedicated reset IC, such as the CY3140, or a discrete reset circuit with a capacitor and resistor to ensure a clean and reliable reset signal.
  • The CY62157G30-45BVXI has built-in ESD protection and latch-up prevention measures, including diodes and resistors. However, it's still recommended to follow proper ESD handling and storage procedures, and to use a latch-up prevention circuit, such as a diode and resistor, on the input pins to prevent latch-up.

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CY62157G30-45BVXI Overview

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