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D3V3F4U10LP-7 - Diodes Incorporated

Description: 5V (Typ) Clamp 5A (8/20µs) Ipp Tvs Diode Surface Mount U-DFN2510-10

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D3V3F4U10LP-7 - Diodes Incorporated PCB footprint - Other - Other - D3V3F4U10LP-7-1
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D3V3F4U10LP-7 - Diodes Incorporated  - 3D model - Other - D3V3F4U10LP-7-1
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D3V3F4U10LP-7 Details

  • Manufacturer Part Number:

    D3V3F4U10LP-7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    U-DFN2510, 10 PIN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    20 Weeks

  • Date Of Intro:

    2017-11-01

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    6

  • Additional Feature:

    PD-NOM,ULTRA LOW CAPACITANCE

  • Breakdown Voltage-Min:

    5.5 V

  • Breakdown Voltage-Nom:

    6.2 V

  • Case Connection:

    ANODE

  • Clamping Voltage-Max:

    3.5 V

  • Configuration:

    COMMON ANODE, 4 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N10

  • Non-rep Peak Rev Power Dis-Max:

    30 W

  • Number of Elements:

    4

  • Number of Terminals:

    10

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.35 W

  • Reference Standard:

    IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    3.3 V

  • Reverse Current-Max:

    1 µA

  • Reverse Test Voltage:

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

D3V3F4U10LP-7 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are suggested. Refer to the Diodes Incorporated application note for more details.
  • The device requires a stable input voltage (VIN) and a bypass capacitor (CBYP) to ensure proper biasing. A 10uF capacitor is recommended for CBYP. Refer to the datasheet for specific biasing requirements.
  • The D3V3F4U10LP-7 has built-in ESD protection diodes. However, it's still recommended to follow proper ESD handling procedures during assembly and testing. For latch-up prevention, ensure that the device is operated within the recommended operating conditions and follow proper PCB design guidelines.
  • The D3V3F4U10LP-7 is rated for operation up to 125°C. However, it's essential to consider the device's power dissipation and thermal management when operating in high-temperature environments. Ensure proper heat sinking and thermal design to prevent overheating.
  • Diodes Incorporated recommends following the JEDEC standards for testing and validation. Additionally, perform functional testing and characterization to ensure the device meets the required specifications and performance requirements.

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D3V3F4U10LP-7 Overview

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