D3V3S1B2LP-7B - Diodes Incorporated

D3V3S1B2LP-7B Details

• Manufacturer Part Number:

  D3V3S1B2LP-7B

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Package Description:

  X1-DFN1006-2, 2 PIN

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• HTS Code:

  8541.10.00.50

• Factory Lead Time:

  12 Weeks

• Manufacturer:

  Diodes Incorporated

• YTEOL:

  7

• Breakdown Voltage-Max:

  6.5 V

• Breakdown Voltage-Min:

  3.8 V

• Breakdown Voltage-Nom:

  5.15 V

• Clamping Voltage-Max:

  9.5 V

• Configuration:

  SINGLE

• Diode Element Material:

  SILICON

• Diode Type:

  TRANS VOLTAGE SUPPRESSOR DIODE

• JESD-30 Code:

  R-PBCC-N2

• JESD-609 Code:

  e4

• Moisture Sensitivity Level:

  1

• Non-rep Peak Rev Power Dis-Max:

  410 W

• Number of Elements:

  1

• Number of Terminals:

  2

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  CHIP CARRIER

• Packing Method:

  TR, 7 INCH

• Peak Reflow Temperature (Cel):

  260

• Polarity:

  BIDIRECTIONAL

• Power Dissipation-Max:

  0.25 W

• Reference Standard:

  IEC-61000-4-2,4-5; MIL-STD-202

• Rep Pk Reverse Voltage-Max:

  3.3 V

• Reverse Current-Max:

  0.5 µA

• Reverse Test Voltage:

  3.3 V

• Surface Mount:

  YES

• Technology:

  AVALANCHE

• Terminal Finish:

  Nickel/Palladium/Gold (Ni/Pd/Au)

• Terminal Form:

  NO LEAD

• Terminal Position:

  BOTTOM

• Time@Peak Reflow Temperature-Max (s):

  30