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D44VH10G - onsemi

Description: Key Parameters Specified @ 100 °C; Complementary Pairs Simplify Circuit Designs; Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A; Fast Switching - tf = 90 ns (Max)

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PCB Footprints
D44VH10G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
D44VH10G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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D44VH10G Details

  • Manufacturer Part Number:

    D44VH10G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    83 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

D44VH10G Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2 oz copper thickness and a thermal relief pattern are suggested. Refer to onsemi's application note AND8031/D for more details.
  • Ensure the device is operated within the recommended junction temperature (Tj) range of -40°C to 150°C. Implement proper thermal management, such as heat sinks or thermal interfaces, to maintain a safe operating temperature.
  • Follow the ESD handling precautions outlined in onsemi's application note AND8032/D. Use an ESD wrist strap or mat, and ensure the device is stored in an anti-static bag or tube.
  • Yes, the D44VH10G is qualified for automotive and high-reliability applications. However, it's essential to follow the specific requirements and guidelines for these applications, such as AEC-Q101 or ISO 26262.
  • Consult onsemi's troubleshooting guide AND8033/D, which provides a step-by-step approach to identifying and resolving common issues. Also, ensure proper PCB design, component selection, and assembly practices.

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Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image D44VH10 onsemi

Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin