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D45VH10G - onsemi

Description: Key Parameters Specified @ 100 °C; Complementary Pairs Simplify Circuit Designs; Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 V (Max) @ 8.0 A; Fast Switching - tf = 90 ns (Max)

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PCB Footprints
D45VH10G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 CASE221A-09
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3D Models
D45VH10G - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 CASE221A-09
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D45VH10G Details

  • Manufacturer Part Number:

    D45VH10G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    ROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    15 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    20

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    83 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    50 MHz

D45VH10G Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device to improve heat dissipation.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Focus on minimizing parasitic inductance and capacitance in the PCB layout. Use a shielded enclosure, and consider adding EMI filters or ferrite beads to the input and output lines. Ensure proper grounding and decoupling of the device.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits. Use a voltage regulator with built-in OVP and OCP, or add external components like zener diodes, resistors, and fuses to prevent damage from voltage and current surges.
  • Use a curve tracer or a parameter analyzer to measure the device's electrical characteristics. Ensure proper probing and connection techniques to avoid damaging the device. Consult the datasheet and application notes for specific testing guidelines.

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D45VH10G Overview

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Part Image D45VH10 onsemi

Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin