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DD100N16S - Infineon

Description: Discrete Semiconductor Modules 20mm Solder Bond Rectifier Diode

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DD100N16S - Infineon  - 3D model
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DD100N16S Details

  • Manufacturer Part Number:

    DD100N16S

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Slovakia

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    ISOLATED

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.6 V

  • JESD-30 Code:

    R-XUFM-X3

  • Non-rep Pk Forward Current-Max:

    2000 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    134 A

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Reference Standard:

    UL RECOGNIZED

  • Rep Pk Reverse Voltage-Max:

    1600 V

  • Reverse Current-Max:

    3000 µA

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

DD100N16S Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the DD100N16S is typically defined by the device's voltage and current ratings. According to the datasheet, the maximum voltage rating is 100V and the maximum current rating is 16A. However, it's recommended to consult Infineon's application notes and thermal design guidelines to ensure safe operation within the SOA.
  • Thermal design for the DD100N16S involves ensuring that the device's junction temperature (Tj) remains within the specified range (-40°C to 150°C) to prevent overheating. This can be achieved by providing adequate heat sinking, using thermal interface materials, and optimizing the PCB layout to minimize thermal resistance. Infineon provides thermal design guidelines and simulation tools to help with this process.
  • The recommended gate drive voltage for the DD100N16S is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and EMI. It's recommended to consult Infineon's application notes and gate drive design guidelines for optimal performance.
  • Ensuring electromagnetic compatibility (EMC) with the DD100N16S involves designing the system to minimize electromagnetic interference (EMI) and ensuring that the device meets relevant EMC standards. This can be achieved by using proper PCB layout techniques, shielding, and filtering, as well as following Infineon's EMC design guidelines and application notes.
  • The recommended layout and routing for the DD100N16S involves minimizing parasitic inductance and capacitance, and ensuring that the device's pins are properly connected to the PCB. This can be achieved by following Infineon's layout and routing guidelines, using a 4-layer PCB with a solid ground plane, and keeping sensitive signals away from noisy power traces.

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DD100N16S Overview

Use the download button to access the DD100N16S 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like DD100, or try a keyword search, such as Rectifier Diodes

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