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DD435N36K - Infineon

Description: Diode Modules 3.6KV 573A

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DD435N36K Details

  • Manufacturer Part Number:

    DD435N36K

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    3

  • Similar Group:

    DI08100610011494

  • Country Of Origin:

    Germany, Hungary

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    ISOLATED

  • Configuration:

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1.71 V

  • JESD-30 Code:

    R-PUFM-X3

  • Non-rep Pk Forward Current-Max:

    12000 A

  • Number of Elements:

    2

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Current-Max:

    573 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Rep Pk Reverse Voltage-Max:

    3600 V

  • Reverse Current-Max:

    50000 µA

  • Reverse Test Voltage:

    3600 V

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

DD435N36K Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • The DD435N36K requires a gate driver that can provide a high peak current (typically > 1A) and a voltage rating that matches the MOSFET's gate-source voltage (Vgs). Infineon recommends their EiceDRIVER series or other compatible gate drivers from reputable manufacturers.
  • While the datasheet specifies a maximum voltage rating of 360V, Infineon recommends limiting voltage overshoots to < 10% of the maximum voltage rating (i.e., < 396V) to ensure reliable operation and prevent damage to the MOSFET.
  • Implementing a robust fault detection and protection circuit is crucial. This can include overcurrent protection using a sense resistor and comparator, overtemperature protection using a thermistor or thermal sensor, and undervoltage protection using a voltage monitor. Infineon provides guidance on fault detection and protection in their application notes and design guides.
  • Infineon provides detailed soldering and assembly guidelines in their package-specific application notes, which include recommendations for soldering temperature, time, and techniques, as well as handling and storage guidelines to prevent damage during assembly.

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DD435N36K Overview

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About Infineon

Infineon Technologies develops semiconductor products for power conversion, control, sensing, connectivity, and security. Its portfolio includes power transistors, gate drivers, microcontrollers, sensors, communication devices, and supporting software. Power semiconductor technologies span silicon, silicon carbide, and gallium nitride, providing options for different switching, voltage, and efficiency requirements.

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Part Image DD435N36KHOSA1 Infineon Technologies AG

Rectifier Diode, 1 Phase, 2 Element, 573A, 3600V V(RRM), Silicon