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DF10G7M1N - Toshiba

Description: ESD Protection Diodes, DFN10

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PCB Footprints
DF10G7M1N - Toshiba PCB footprint - Other - Other - 1-3V1A
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DF10G7M1N - Toshiba  - 3D model - Other - 1-3V1A
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DF10G7M1N Details

  • Manufacturer Part Number:

    DF10G7M1N

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    DFN10, 10 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6.44

  • Breakdown Voltage-Min:

    6 V

  • Clamping Voltage-Max:

    12 V

  • Configuration:

    COMMON ANODE, 5 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-PDSO-N10

  • Non-rep Peak Rev Power Dis-Max:

    12 W

  • Number of Elements:

    5

  • Number of Terminals:

    10

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity:

    UNIDIRECTIONAL

  • Reference Standard:

    IEC-61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    5 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    5 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

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DF10G7M1N Overview

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