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DF2B6M5CT,L3F - Toshiba

Description: ESD Suppressors / TVS Diodes Bidirectional ESD Diode VRWM:+/-5.0 V, SOD-882 CT:0.3-0.45pF

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DF2B6M5CT,L3F - Toshiba - PCB symbol
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PCB Footprints
DF2B6M5CT,L3F - Toshiba PCB footprint - Other - Other - CST2_2023
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3D Models
DF2B6M5CT,L3F - Toshiba - 3D model - Other - CST2_2023
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DF2B6M5CT,L3F Details

  • Manufacturer Part Number:

    DF2B6M5CT,L3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Additional Feature:

    LOW CAPACITANCE

  • Clamping Voltage-Max:

    15 V

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JESD-30 Code:

    R-XBCC-N2

  • Non-rep Peak Rev Power Dis-Max:

    37 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity:

    BIDIRECTIONAL

  • Reference Standard:

    IEC61000-4-2, 4-5

  • Rep Pk Reverse Voltage-Max:

    5 V

  • Reverse Current-Max:

    0.1 µA

  • Reverse Test Voltage:

    5 V

  • Surface Mount:

    YES

  • Technology:

    AVALANCHE

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

DF2B6M5CT,L3F Frequently Asked Questions (FAQs)

  • Toshiba recommends a thermal pad on the bottom of the package, connected to a copper plane on the PCB. The copper plane should be at least 1mm away from any other copper features to minimize thermal resistance.
  • Toshiba recommends derating the maximum junction temperature (Tj) by 1°C for every 1°C above 25°C ambient temperature. Ensure proper heat sinking and thermal management) to maintain a safe operating temperature.
  • The maximum allowable voltage stress on the device is 1.5 times the rated voltage (Vr) for a duration of 1 second or less. Exceeding this limit may cause permanent damage to the device.
  • Toshiba recommends following standard ESD handling procedures, such as using wrist straps, anti-static bags, and mats. Ensure that all equipment and tools are grounded to prevent static discharge.
  • Toshiba recommends storing the device in a dry, clean environment at a temperature range of -40°C to 125°C, and a relative humidity of 60% or less.

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DF2B6M5CT,L3F Overview

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