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DF3A6.8LCT,L3F - Toshiba

Description: Unidirectional ESD Diode 2 lines, VBR=6.5V, CT=5.5pF

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PCB Footprints
DF3A6.8LCT,L3F - Toshiba PCB footprint - Other - Other - DF3A6.8LCT,L3F-1
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3D Models
DF3A6.8LCT,L3F - Toshiba  - 3D model - Other - DF3A6.8LCT,L3F-1
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DF3A6.8LCT,L3F Details

  • Manufacturer Part Number:

    DF3A6.8LCT,L3F

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    6

  • Breakdown Voltage-Max:

    7.1 V

  • Breakdown Voltage-Min:

    6.5 V

  • Breakdown Voltage-Nom:

    6.8 V

  • Case Connection:

    ANODE

  • Configuration:

    COMMON ANODE, 2 ELEMENTS, 2 CHANNEL

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • Dynamic Impedance-Max:

    50 Ω

  • JESD-30 Code:

    R-XBCC-N3

  • Number of Elements:

    2

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    0.15 W

  • Reference Standard:

    IEC-61000-4-2

  • Reference Voltage-Nom:

    6.8 V

  • Rep Pk Reverse Voltage-Max:

    5 V

  • Reverse Current-Max:

    0.5 µA

  • Reverse Test Voltage:

    5 V

  • Surface Mount:

    YES

  • Technology:

    ZENER

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Voltage Tol-Max:

    4.41%

  • Working Test Current:

    5 mA

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
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DF3A6.8LCT,L3F Overview

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