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DFB25100 - onsemi

Description: Plastic Material has Underwriters Laboratory Flammability Classification 94V-0; Surge Overload Rating: 350 A Peak; High Case Dielectric Strength: 2500 VRMS; Ideal for Printed Circuit Board; UL Certificate # E258596; Reliable Low-Cost Construction; Isolated Voltage from Case to Lead: > 2500 V; Glass-Passivated Junction

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Symbol
DFB25100 - onsemi - PCB symbol
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PCB Footprints
DFB25100 - onsemi PCB footprint - Other - Other - SIP4 30x20 CASE 127EP ISSUE O_2023
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3D Models
DFB25100 - onsemi - 3D model - Other - SIP4 30x20 CASE 127EP ISSUE O_2023
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DFB25100 Details

  • Manufacturer Part Number:

    DFB25100

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SIP-4

  • Manufacturer Package Code:

    127EP

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.85

  • Additional Feature:

    UL RECOGNIZED

  • Breakdown Voltage-Min:

    1000 V

  • Case Connection:

    ISOLATED

  • Configuration:

    BRIDGE, 4 ELEMENTS

  • Diode Element Material:

    SILICON

  • Diode Type:

    BRIDGE RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1 V

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Non-rep Pk Forward Current-Max:

    350 A

  • Number of Elements:

    4

  • Number of Phases:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    25 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Rep Pk Reverse Voltage-Max:

    1000 V

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

DFB25100 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to ensure good heat dissipation.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout guidelines. Also, consider derating the device's power handling at high temperatures.
  • The SOA is typically defined by the device's voltage and current ratings. For the DFB25100, the maximum voltage rating is 100V, and the maximum current rating is 25A. Operating within these limits ensures safe and reliable operation.
  • Implement a robust EOS protection scheme, including TVS diodes, resistors, and capacitors. Also, ensure proper PCB layout and routing to minimize parasitic inductance and capacitance.
  • A gate drive circuit with a high-current, low-impedance design is recommended. A dedicated gate driver IC or a discrete transistor-based design can be used, ensuring a fast rise and fall time to minimize switching losses.

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DFB25100 Overview

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