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DGD2003S8-13 - Diodes Incorporated

Description: Half-Bridge Gate Driver IC Non-Inverting 8-SO Type TH

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DGD2003S8-13 - Diodes Incorporated PCB footprint - Small Outline Packages - Small Outline Packages - SO-8 (Type TH)
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DGD2003S8-13 - Diodes Incorporated  - 3D model - Small Outline Packages - SO-8 (Type TH)
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DGD2003S8-13 Details

  • Manufacturer Part Number:

    DGD2003S8-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    12 Weeks

  • Date Of Intro:

    2019-02-21

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    7.75

  • High Side Driver:

    YES

  • Input Characteristics:

    STANDARD

  • Interface IC Type:

    HALF BRIDGE BASED MOSFET DRIVER

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Length:

    4.9 mm

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Output Characteristics:

    PUSH-PULL

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Seated Height-Max:

    1.75 mm

  • Supply Current-Max:

    0.5 mA

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    10 V

  • Supply Voltage-Nom:

    15 V

  • Surface Mount:

    YES

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.22 µs

  • Turn-on Time:

    0.82 µs

  • Width:

    3.9 mm

DGD2003S8-13 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a PCB layout with a solid ground plane, short traces, and minimal vias to reduce parasitic inductance and capacitance. A 4-layer PCB with a dedicated ground plane is ideal.
  • The DGD2003S8-13 requires a bias voltage of 2.5V to 5.5V. Ensure the bias voltage is stable and within the recommended range. A decoupling capacitor of 10nF to 100nF should be placed close to the device to filter out noise.
  • The DGD2003S8-13 is rated for operation from -40°C to 125°C. However, the device's performance may degrade at extreme temperatures. Ensure proper thermal management and heat dissipation to maintain optimal performance.
  • Yes, the DGD2003S8-13 is suitable for high-frequency applications up to 1GHz. However, the device's performance may degrade at frequencies above 500MHz. Ensure proper PCB layout and component selection to minimize parasitic effects.
  • The DGD2003S8-13 has an integrated ESD protection diode. However, it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure the device is stored in an ESD-safe environment.

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