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DMG2305UX-13 - Diodes Incorporated

Description: MOSFET P-Ch 20V 5A Enhancement SOT23 Diodes Inc DMG2305UX-13 P-channel MOSFET Transistor, -3.3 A, -20 V, 3-Pin SOT-23

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PCB Footprints
DMG2305UX-13 - Diodes Incorporated PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - DMG2305UX-13-1
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DMG2305UX-13 - Diodes Incorporated  - 3D model - SOT23 (3-Pin) - DMG2305UX-13-1
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DMG2305UX-13 Details

  • Manufacturer Part Number:

    DMG2305UX-13

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5.32

  • Additional Feature:

    HIGH RELIABILITY

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    4.2 A

  • Drain-source On Resistance-Max:

    0.052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.4 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMG2305UX-13 Frequently Asked Questions (FAQs)

  • A recommended PCB layout for optimal thermal performance would be to use a 2-layer or 4-layer board with a solid ground plane on the bottom layer, and a thermal relief pattern on the top layer. This helps to dissipate heat efficiently.
  • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet. Use a voltage regulator or a voltage divider network to set the desired voltage, and add decoupling capacitors to filter out noise and ripple.
  • To prevent ESD damage, handle the device in an ESD-safe environment, wear an ESD wrist strap or use an ESD mat, and avoid touching the device's pins or leads. Use anti-static packaging and follow proper storage and handling procedures.
  • The DMG2305UX-13 is rated for operation up to 150°C. However, it's essential to consider the device's thermal characteristics, PCB design, and cooling mechanisms to ensure reliable operation in high-temperature environments.
  • To troubleshoot issues, use a multimeter to measure voltage and current, and an oscilloscope to analyze waveforms. Check the PCB layout, component values, and soldering quality. Consult the datasheet and application notes for guidance on troubleshooting common issues.

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DMG2305UX-13 Overview

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Part Image DMG2305UX-7 Diodes Incorporated

Power Field-Effect Transistor, 4.2A I(D), 20V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET