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DMG6402LDM-7 - Diodes Incorporated

Description: Diodes Inc DMG6402LDM-7 N-channel MOSFET Transistor, 5.3 A, 30 V, 6-Pin SOT-26

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DMG6402LDM-7 - Diodes Incorporated PCB footprint - Other - Other - SOT--26
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DMG6402LDM-7 Details

  • Manufacturer Part Number:

    DMG6402LDM-7

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOT-26, 6 PIN

  • Pin Count:

    6

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    5.3 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.12 W

  • Pulsed Drain Current-Max (IDM):

    31 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    MIL-STD-202

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMG6402LDM-7 Frequently Asked Questions (FAQs)

  • A good PCB layout for the DMG6402LDM-7 should include a solid ground plane, wide power traces, and a thermal relief pattern under the device. A minimum of 2oz copper thickness is recommended. Refer to the Diodes Incorporated application note AN-114 for more details.
  • The DMG6402LDM-7 requires a bias voltage of 2.5V to 5.5V. Ensure the bias voltage is stable and noise-free. A decoupling capacitor of 10nF to 100nF should be placed close to the device. Refer to the datasheet for more information on biasing and decoupling.
  • The DMG6402LDM-7 has an operating temperature range of -40°C to 125°C. However, the device's performance and reliability may degrade above 85°C. Ensure proper thermal management and heat sinking to maintain a safe operating temperature.
  • Yes, the DMG6402LDM-7 is suitable for high-frequency applications up to 1GHz. However, ensure proper PCB layout, decoupling, and impedance matching to minimize signal loss and distortion.
  • Handle the DMG6402LDM-7 with anti-static precautions to prevent ESD damage. Store the devices in their original packaging or in a dry, cool place. Avoid exposing the devices to moisture, direct sunlight, or extreme temperatures.

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