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DMN3009LFV-7 - Diodes Incorporated

Description: 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX)

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DMN3009LFV-7 - Diodes Incorporated PCB footprint - Other - Other - PowerDI3333-8_24
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DMN3009LFV-7 - Diodes Incorporated  - 3D model - Other - PowerDI3333-8_24
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DMN3009LFV-7 Details

  • Manufacturer Part Number:

    DMN3009LFV-7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Diodes Incorporated

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

DMN3009LFV-7 Frequently Asked Questions (FAQs)

  • Diodes Incorporated recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, and consider using a voltage regulator or a resistive divider network to set the gate-source voltage (Vgs) within the specified range.
  • Exceeding the maximum Tj rating can lead to reduced lifespan, increased thermal resistance, and potentially catastrophic failure. Ensure proper thermal management and design margins to prevent overheating.
  • While the DMN3009LFV-7 is suitable for high-frequency switching, it's essential to consider the device's parasitic capacitances, inductances, and switching losses. Ensure proper layout, decoupling, and snubber design to minimize ringing and EMI.
  • Implement ESD protection measures such as using ESD-resistant devices, adding ESD protection diodes or networks, and following proper handling and storage procedures to prevent damage during manufacturing and assembly.

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DMN3009LFV-7 Overview

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