DMN3013LDG-13 - Diodes Incorporated

DMN3013LDG-13 Details

• Manufacturer Part Number:

  DMN3013LDG-13

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Mainland China

• ECCN Code:

  EAR99

• HTS Code:

  8541.29.00.95

• Factory Lead Time:

  24 Weeks

• Date Of Intro:

  2018-07-25

• Manufacturer:

  Diodes Incorporated

• YTEOL:

  5

• Avalanche Energy Rating (Eas):

  28 mJ

• Case Connection:

  SOURCE

• Configuration:

  SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

• DS Breakdown Voltage-Min:

  30 V

• Drain Current-Max (ID):

  9.5 A

• Drain-source On Resistance-Max:

  0.0177 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  16 pF

• JESD-30 Code:

  S-PDSO-N8

• JESD-609 Code:

  e3

• Moisture Sensitivity Level:

  1

• Number of Elements:

  2

• Number of Terminals:

  8

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  SQUARE

• Package Style:

  SMALL OUTLINE

• Peak Reflow Temperature (Cel):

  260

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation Ambient-Max:

  2.16 W

• Power Dissipation-Max (Abs):

  2.16 W

• Pulsed Drain Current-Max (IDM):

  80 A

• Reference Standard:

  MIL-STD-202

• Surface Mount:

  YES

• Terminal Finish:

  Matte Tin (Sn)

• Terminal Form:

  NO LEAD

• Terminal Position:

  DUAL

• Time@Peak Reflow Temperature-Max (s):

  30

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON